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Life is far from thermodynamic equilibrium. Hence, life must extract energy from the environment. On Earth, that energy is driven by networks of metabolic reactions in all cells which ultimately move electrons and protons (i.e. hydrogen atoms) across the planet. The origin of metabolism required the emergence and evolution of proteins. Proteins are nanometre-scale chemical machines—i.e. literal nanomachines which physically move. These nanomachines enable living systems to perform essential biochemical tasks from replication to metabolism; the latter being the engines of life. In all extant life on Earth, a small set of these nanomachines, called oxidoreductases, couple chemical energy from the environment with core redox reactions including photosynthesis, respiration and nitrogen fixation. The origins and emergence of complex life have been intimately tied with evolution of oxidoreductases. Here, using structure-based analyses, we describe the evolution of the protein catalysts in three biological epochs. First, thermodynamically driven polymerization reactions generated simple metal-binding peptides with specific sequences that catalysed core metabolic reactions. Second, these catalysts were incorporated in small structural ‘folds’. In the third epoch, these folds served as building blocks for extant, complex nanomachines. This article is part of the discussion meeting issue ‘Chance and purpose in the evolution of biospheres’. 

GaN-on-GaN vertical diode is a promising device for next-generation power electronics. Its breakdown voltage (BV) is limited by edge termination designs such as guard rings. The design space of guard rings is huge and it is difficult to optimize manually. In this paper, we propose an effective inverse design strategy to co-optimize BV and (V F Q) −1 , where BV, V F , and Q are the breakdown voltage, forward voltage, and reserve capacitive charge of the diode, respectively. Using rapid Technology Computer-Aided-Design (TCAD) simulations, neural network (NN), and Pareto front generation, a GaN-on-GaN diode is optimized within 24 hours. We can obtain structures with 200V higher BV at medium (V F Q) −1 or find a nearly ideal BV structure with 25% higher BV 2 /R on compared to the best randomly generated TCAD data. 

Bio-derived isobutanol has been approved as a gasoline additive in the US, but our understanding of its combustion chemistry still has significant uncertainties. Detailed quantum calculations could improve model accuracy leading to better estimation of isobutanol's combustion properties and its environmental impacts. This work examines 47 molecules and 38 reactions involved in the first oxygen addition to isobutanol's three alkyl radicals located α, β, and γ to the hydroxide. Quantum calculations are mostly done at CCSD(T)-F12/cc-pVTZ-F12//B3LYP/CBSB7, with 1-D hindered rotor corrections obtained at B3LYP/6-31G(d). The resulting potential energy surfaces are the most comprehensive isobutanol peroxy networks published to date. Canonical transition state theory and a 1-D microcanonical master equation are used to derive high-pressure-limit and pressure-dependent rate coefficients, respectively. At all conditions studied, the recombination of γ-isobutanol radical with O 2 forms HO 2 + isobutanal. The recombination of β-isobutanol radical with O 2 forms a stabilized hydroperoxy alkyl radical below 400 K, water + an alkoxy radical at higher temperatures, and HO 2 + an alkene above 1200 K. The recombination of β-isobutanol radical with O 2 results in a mixture of products between 700–1100 K, forming acetone + formaldehyde + OH at lower temperatures and forming HO 2 + alkenes at higher temperatures. The barrier heights, high-pressure-limit rates, and pressure-dependent kinetics generally agree with the results from previous quantum chemistry calculations. Six reaction rates in this work deviate by over three orders of magnitude from kinetics in detailed models of isobutanol combustion, suggesting the rates calculated here can help improve modeling of isobutanol combustion and its environmental fate.